Quantification of Carrier Density Gradients along Axially Doped Silicon Nanowires Using Infrared Nanoscopy
Quantification of Carrier Density Gradients along Axially Doped Silicon Nanowires Using Infrared Nanoscopy
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DOI：
10.1021/acsphotonics.9b00466
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发表时间：
2019-07-01
期刊：
影响因子：
7
通讯作者：
Taubner, Thomas
中科院分区：
文献类型：
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作者：
Jung, Lena;Pries, Julian;Taubner, Thomas
掺杂半导体纳米结构对于纳米电子和光子器件的制造是令人感兴趣的。在这里，我们使用散射型扫描近场光学显微镜（S-SNOM）来表征轴向载流子浓度梯度在磷掺杂硅纳米线。我们定量地确定掺杂段的载流子密度和长度以及掺杂和名义上未掺杂段之间的过渡区中的载流子梯度的函数形式。这些测量是通过理解和占过渡区的近场光学对比度上的原生氧化物的影响。我们的研究结果支持相关的能量色散X射线光谱（EDS）测量。这项工作证明了s-SNOM直接探测纳米级电荷载流子密度通过薄表面层的转变，一种能力，是重要的各种掺杂的半导体系统的能力。
Doped semiconductor nanostructures are interesting for the fabrication of nanoscale electronic and photonic devices. Here, we use scattering-type scanning near-field optical microscopy (s-SNOM) to characterize axial carrier density gradients in phosphorus-doped silicon nanowires. We quantitatively determine the carrier density and length of the doped segment as well as the functional form of the charge carrier gradient in the transition region between doped and nominally undoped segments. These measurements are enabled by understanding and accounting for the influence of the native oxide on the near-field optical contrasts in the transition region. Our results are supported by correlative energy dispersive X-ray spectroscopy (EDS) measurements. This work demonstrates the ability of s-SNOM to directly probe nanoscale charge carrier density transitions through thin surface layers, a capability that is important for a variety of doped semiconductor systems.