Dislocation structure during microindentation
Dislocation structure during microindentation
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DOI：
10.1016/j.ijengsci.2015.05.005
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发表时间：
2015-09
影响因子：
6.6
通讯作者：
M. Baitsch;K. Le;T. M. Tran
中科院分区：
文献类型：
--
作者：
M. Baitsch;K. Le;T. M. Tran
在最近提出的连续位错理论的基础上，利用有限元法对单晶体的位移控制楔形压痕进行了数值模拟。在晶体平面应变变形的假设下，在楔的每一侧上只有一个活动滑移系，计算了加载和卸载路径的载荷-位移曲线以及位错密度。数值模拟的结果进行了比较，从实验中得到的定性协议。
Within the recently proposed continuum dislocation theory, numerical simulations of the displacement controlled wedge indentation for single crystals using the finite elements are provided. Under the assumption of plane strain deformation of the crystal having only one active slip system on each side of the wedge the load–displacement curve as well as the dislocation density are computed for the loading and unloading path in terms of the indentation depth. The results of numerical simulations are compared with those obtained from the experiments which shows qualitative agreement.