Ultrathin MoS₂-Channel FeFET Memory With Enhanced Ferroelectricity in HfZrO₂ and Body-Potential Control
Ultrathin MoS₂-Channel FeFET Memory With Enhanced Ferroelectricity in HfZrO₂ and Body-Potential Control
复制标题
超薄 MoS2 通道 FeFET 存储器，具有增强的 HfZrO2 铁电性和体电位控制
DOI：
10.1109/jeds.2021.3133570
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发表时间：
2022
影响因子：
2.3
通讯作者：
M. Kobayashi
中科院分区：
文献类型：
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作者：
Jiawen Xiang;W. Chang;T. Saraya;T. Hiramoto;T. Irisawa;M. Kobayashi
我们实验证明了超薄MoS<sub> </sub>通道和底栅结构的HfO<sub> </sub>基铁电场效应管（FeFET）的记忆操作。ZrO<sub> </sub>种子层通过沉积后退火工艺增强了HfZrO<sub> </sub>的铁电性。MoS<sub bbb2 </sub>层的表面钝化降低了晶体管特性的不稳定性。一个额外的顶部闸门有效地控制身体电位，而不是漂浮的身体。因此，利用增强的铁电性和体电位控制，实现了ffet记忆操作。通过脉冲写入操作，超薄MoS<sub - >2</sub - >通道FeFET显示出0.22V的记忆窗口，保持时间>5000秒，持久周期<inline-formula> < text -math notation="LaTeX">$> 10^{6}$ </ text -math></inline-formula>次。这项工作强调了该器件在高密度存储器（如3D ffet）中的适用性。
We have experimentally demonstrated memory operation of a HfO<sub>2</sub>-based ferroelectric FET (FeFET) with an ultrathin MoS<sub>2</sub> channel and bottom-gate structure. ZrO<sub>2</sub> seed layer enhances ferroelectricity in HfZrO<sub>2</sub> by post deposition anneal process. Surface passivation of a MoS<sub>2</sub> layer reduces the instability of the transistor characteristics. An additional top gate effectively controls the body potential instead of floating body. Thereby, FeFET memory operation was realized with enhanced ferroelectricity and body-potential control. By using pulse write operation, the ultrathin MoS<sub>2</sub> channel FeFET showed the memory window of 0.22V, the retention time >5000 seconds, and the endurance cycles were <inline-formula> <tex-math notation="LaTeX">$> 10^{6}$ </tex-math></inline-formula> times. This work highlights the applicability of the device for high-density memory such as 3D FeFET.