Low-threshold, high-temperature operation of 1.2 mu m InGaAs vertical cavity lasers
Low-threshold, high-temperature operation of 1.2 mu m InGaAs vertical cavity lasers
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1.2 μm InGaAs 垂直腔激光器的低阈值、高温运行
DOI：
10.1049/el:20010644
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
M. Hammar
中科院分区：
文献类型：
--
作者：
F. Salomonsson;C. Asplund;P. Sundgren;G. Plaine;S. Mogg;M. Hammar
报道了发射波长为1215 nm的高性能InGaAs/GaAs量子阱垂直腔激光器的生长和特性。连续波操作演示了…
The growth and characterisation of high performance InGaAs/GaAs quantum-well vertical cavity lasers with an emission wavelength of 1215 nm is reported. Continuous wave operation is demonstrated up ...