Electroreflectance detection of resonant coupling between Wannier-Stark localization states in a GaAs/AlAs superlattice.
Electroreflectance detection of resonant coupling between Wannier-Stark localization states in a GaAs/AlAs superlattice.
复制标题
GaAs/AlAs 超晶格中 Wannier-Stark 局域态之间共振耦合的电反射检测。
DOI：
10.1103/physrevb.44.5935
复制
发表时间：
1991
期刊：
影响因子：
--
通讯作者：
Fujiwara
中科院分区：
文献类型：
--
作者：
Nakayama;Tanaka;Nishimura;Kawashima;Fujiwara
在77 K下，我们测量了GaAs（6.4nm）/AlAs（0.9nm）p-i-n结构超晶格中与第一（n=1）子带有关的重空穴和轻空穴激子跃迁的电反射强度与电场的关系。研究发现，由于波函数离域引起的强度降低，电反射强度是探测Wannier-Stark定域态间共振耦合的高灵敏探针。我们已经清楚地检测到各种共振耦合之间的空穴子带，这还没有观察到，除了那些之间的电子子带。我们用Airy函数的转移矩阵方法，在电子和空穴波函数重叠积分的基础上，分析了共振耦合的电反射强度变化。
We have measured the electric-field dependence of the electroreflectance intensities of the heavy-hole and light-hole exciton transitions associated with the first (n=1) subbands in a GaAs (6.4 nm)/AlAs (0.9 nm) superlattice embedded in a p-i-n structure at 77 K. It is found that the electroreflectance intensities are highly sensitive probes to detect the resonant couplings between the Wannier-Stark localization states owing to the intensity reduction induced by the wave-function delocalization. We have clearly detected the various resonant couplings between the hole subbands, which have not been observed yet, in addition to those between the electron subbands. We have analyzed the electroreflectance-intensity change for the resonant coupling on the basis of the overlap integral between the electron and hole wave functions by using a transfer-matrix method with the Airy function.