Adhesion improvement of cubic boron nitride films by in situ annealing
Adhesion improvement of cubic boron nitride films by in situ annealing
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DOI：
10.1016/j.surfcoat.2005.04.008
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发表时间：
2006-04
影响因子：
5.4
通讯作者：
Jing Yu;S. Song;L. Weng
中科院分区：
文献类型：
--
作者：
Jing Yu;S. Song;L. Weng
研究了原位退火热处理对偏压辅助直流喷射等离子体化学气相沉积制备的高结晶度立方氮化硼厚膜结合力和结构的影响。结果表明，原位退火法改善了粘附性。原位退火后，拉曼衍射峰和X射线衍射峰的半峰宽减小。在1060-1100°C温度范围内原位热处理后，计算的晶体尺寸从18.4 nm增加到27.2 nm，结合我们的生长过程和原位热处理，获得了厚度较大、结晶程度较高的立方氮化硼薄膜。
Effects of in situ annealing on adhesion and structure of thick and highly crystallized cubic boron nitride films deposited by bias assisted dc jet plasma chemical vapor deposition were investigated. Improvement of adhesion by in situ annealing was observed. The full width at half maximum of Raman and X-ray diffraction peaks decreased after in situ annealing. The calculated crystal size increases from 18.4 to 27.2 nm after in situ annealing at 1060–1100 °C. Thick and highly crystallized cubic boron nitride films were obtained by combining our growth process and the in situ annealing.