Determination of boron and phosphorus concentration in silicon by photoluminescence analysis
Determination of boron and phosphorus concentration in silicon by photoluminescence analysis
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光致发光分析法测定硅中硼和磷的浓度
DOI：
10.1063/1.89897
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发表时间：
1978
影响因子：
4
通讯作者：
M. Tajima
中科院分区：
文献类型：
--
作者：
M. Tajima
报道了一种在液氦温度下通过光致发光（PL）分析获得硅晶体中硼磷浓度的新方法。PL光谱中本征组分和本征组分的强度比反映了杂质浓度。通过与电阻率测量结果的比较，得到了本方法对硼、磷的初步校正曲线。该方法对硼和磷的检出限分别为1×1011 cm−3和5×1011 cm−3。补偿的程度也可以估计。PL方法可以无损地测定样品小区域内少量杂质的浓度。
A novel method to obtain boron and phosphorus concentration in silicon crystals by photoluminescent (PL) analysis at liquid‐helium temperature is reported. The intensity ratio between intrinsic and extrinsic components in the PL spectra reflects the impurity concentration. The tentative calibration curves for boron and phosphorus for our method are obtained by comparison with the results of the resistivity measurement. The detection limit of this method is estimated to be as low as 1×1011 cm−3 for boron and 5×1011 cm−3 for phosphorus. The degree of compensation can be estimated also. The PL method makes it possible to determine nondestructively the concentration of small amount of impurities in a small region of a specimen.