Synthesis of Well-Aligned Carbon Nanotubes Using a High-Density RF Inductive Coupling Plasma
Synthesis of Well-Aligned Carbon Nanotubes Using a High-Density RF Inductive Coupling Plasma
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DOI：
10.1143/jjap.44.1951
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发表时间：
2005-04
影响因子：
1.5
通讯作者：
H. Shirai;Tomoyuki Kikuchi;Tomohiro Kobayashi
中科院分区：
文献类型：
--
作者：
H. Shirai;Tomoyuki Kikuchi;Tomohiro Kobayashi
利用甲烷的高密度射频感应耦合等离子体增强化学气相沉积证明了垂直排列的碳纳米管的生长。充足的 CH4 相关前体供应以及由于负基底直流偏压而在顶表面快速产生大量悬空键对于提高垂直排列良好的碳纳米管的沉积速率至关重要。通过调整等离子体条件，使用纯甲烷 (50 sccm) 实现了以 60 Å/s 的速度快速沉积垂直排列的多壁碳纳米管。
Growth of vertically well-aligned carbon nanotubes was demonstrated utilizing high-density rf inductive coupling plasma-enhanced chemical vapor deposition of methane. A sufficient supply of CH4-related precursors as well as a rapid large number of dangling bonds at the top surface due to a negative substrate dc bias are essential for promoting the deposition rate of vertically well-aligned carbon nanotubes. Rapid deposition at 60 Å/s of vertically well-aligned multi-walled carbon nanotubes was achieved using pure methane (50 sccm) by adjusting the plasma conditions.