0.25-$\mu\hbox{m}$ GaN TeraFETs Optimized as THz Power Detectors and Intensity-Gradient Sensors
0.25-$\mu\hbox{m}$ GaN TeraFETs Optimized as THz Power Detectors and Intensity-Gradient Sensors
复制标题
DOI：
10.1109/tthz.2016.2520202
复制
发表时间：
2016-02
影响因子：
3.2
通讯作者：
S. Boppel;M. Ragauskas;A. Hajo;M. Bauer;A. Lisauskas;S. Chevtchenko;A. Ramer;I. Kašalynas;G. Valušis;H.J. Wurfl;W. Heinrich;G. Trankle;V. Krozer;H. Roskos
中科院分区：
文献类型：
--
作者：
S. Boppel;M. Ragauskas;A. Hajo;M. Bauer;A. Lisauskas;S. Chevtchenko;A. Ramer;I. Kašalynas;G. Valušis;H.J. Wurfl;W. Heinrich;G. Trankle;V. Krozer;H. Roskos
这封信报告的影响，照明条件对三端设备的检测器响应。采用0.25 μm AlGaN/GaN工艺实现了用于THz辐射等离子体探测的双极耦合场效应晶体管（TeraFET）。集成蝴蝶结天线以各种方式连接到电相同的晶体管的源极、漏极和栅极端子。如果辐射功率对称地耦合到晶体管沟道的源极和漏极侧，则TeraFET变得对照明功率的梯度强度敏感。据发现，完全不对称的耦合，非平凡的，以确保在太赫兹频率，需要一个纯粹的响应入射功率。
This letter reports on the influence of illumination conditions on the detector response of three-terminal devices. Antenna-coupled field-effect transistors for the plasmonic detection of THz radiation (TeraFETs) were realized using a 0.25- μm AlGaN/GaN process. Integrated bow-tie antennas are connected to the source, drain and gate terminals of electrically identical transistors in various ways. If radiation power is coupled symmetrically to the source and drain sides of the transistors' channels, TeraFETs become sensitive to gradient-intensity of the illumination power. It is found that fully asymmetric coupling, nontrivial to ensure at THz-frequencies, is required for a pure response to incident power.