Thin films of tin(II) sulphide (SnS) by aerosol-assisted chemical vapour deposition (AACVD) using tin(II) dithiocarbamates as single-source precursors
Thin films of tin(II) sulphide (SnS) by aerosol-assisted chemical vapour deposition (AACVD) using tin(II) dithiocarbamates as single-source precursors
复制标题
DOI：
10.1016/j.jcrysgro.2014.07.019
复制
发表时间：
2015-04-01
影响因子：
1.8
通讯作者：
O'Brien, Paul
中科院分区：
文献类型：
--
作者：
Kevin, Punarja;Lewis, David J.;O'Brien, Paul
描述了具有式[Sn（S_2CNRR ′）（2）]（其中R=Et，R ′ = n-Bu（1）; R=Me，R ′ = n-Bu（2）; R= R ′ = Et（3））的不对称二硫代氨基甲酸锡（II）酯的合成及其用于通过气溶胶辅助化学气相沉积（AACVD）沉积SnS薄膜的用途。研究了温度和前驱物浓度对沉积的影响。SnS的化学计量在较高浓度的前体（250 mM）和450 ℃下最佳。通过该方法产生的SnS的直接电子带隙由光学吸光度测量估计为1.2eV。通过粉末X射线衍射（p-XRD）和X射线能量色散分析（EDAX）光谱证实了薄膜的组成。(C)2015年，作者。由Elsevier B. V.出版。这是一篇开放获取的文章，在CC BY许可证下
The synthesis of the asymmetric dithiocarbamates of tin(II) with the formula [Sn(S2CNRR')(2)] (where R=Et, R'=n-Bu (1); R=Me, R'=n-Bu (2); R=R'=Et (3)) and their use for the deposition of SnS thin films by aerosol-assisted chemical vapour deposition (AACVD) is described. The effects of temperature and the concentration of the precursors on deposition were investigated. The stoichiometry of SnS was best at higher concentrations of precursors (250 mM) and at 450 degrees C. The direct electronic band gap of the SnS produced by this method was estimated from optical absorbance measurements as 1.2 eV. The composition of films was confirmed by powder X-ray diffraction (p-XRD) and energy dispersive analysis of X-rays (EDAX) spectroscopy. (C) 2015 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license