Minimal Phase-Change Marks Produced in Amorphous Ge2Sb2Te5 Films
Minimal Phase-Change Marks Produced in Amorphous Ge2Sb2Te5 Films
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DOI：
10.1143/jjap.43.l818
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发表时间：
2004-06
影响因子：
1.5
通讯作者：
T. Gotoh;K. Sugawara;Keiji Tanaka
中科院分区：
文献类型：
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作者：
T. Gotoh;K. Sugawara;Keiji Tanaka
最小的标记，可以产生在相变记录已被探索使用原子力显微镜。电脉冲通过导电杠杆施加到非晶Ge_2Sb_2Te_5薄膜上可以产生结晶标记，其尺寸随着输入功率、脉冲持续时间和薄膜厚度的减小而减小。在厚度为0.1nm的膜中获得的最小标记直径为0.10nm。并对该痕迹的形成机理进行了探讨。
The smallest mark which can be produced in phase-change recordings has been explored using an atomic force microscope. Electrical pulses applied to amorphous Ge2Sb2Te5 films through conducting cantilevers can produce crystalline marks, the size decreasing with decreases in input power, pulse duration, and film thickness. The smallest mark obtained is ∼10 nm in diameter in a film with thickness of ∼1 nm. Formation mechanism of the mark is discussed.