WETTING BEHAVIOR IN THE AL-SI/SIC SYSTEM - INTERFACE REACTIONS AND SOLUBILITY EFFECTS
WETTING BEHAVIOR IN THE AL-SI/SIC SYSTEM - INTERFACE REACTIONS AND SOLUBILITY EFFECTS
复制标题
DOI：
10.1016/0956-7151(95)00014-m
复制
发表时间：
1995-08-01
期刊：
影响因子：
--
通讯作者：
DERBY, B
中科院分区：
文献类型：
--
作者：
FERRO, AC;DERBY, B
采用座滴法研究了700-1100 ℃温度范围内真空条件下Al-Si合金在SiC烧结陶瓷基片上的润湿行为。测试了Si浓度高达50%的Al-Si合金。在900-1000 ℃下观察到预期的非润湿/润湿转变，这是由于熔融合金周围存在氧化铝膜。在较高的温度下，观察到润湿，并且合金的Si浓度对所测量的接触角θ具有显著的影响。在1100 ℃时，当使用A112.3%Si或A116.6%Si合金代替纯Al时，θ从55度减小到25度。由于Al-Si合金的Si浓度增加，在界面处形成连续的Al 4C 3层的抑制和SiC表面的溶解和重构过程是解释所观察到的行为的关键因素。
The sessile drop technique was used to study the wetting behaviour of Al-Si alloys on SiC sintered ceramic substrates under vacuum in the 700-1100 degrees C temperature interval. Al-Si alloys with Si concentrations up to 50% were tested. An expected non-wetting/wetting transition was observed at 900-1000 degrees C due to the presence of an alumina film surrounding the molten alloy. At higher temperatures wetting was observed and the Si concentration of the alloy has a marked effect on the measured contact angles, theta. At 1100 degrees C theta decreases from 55 degrees to 25 degrees when instead of pure Al an A112.3%Si or an A116.6%Si alloy is used. The suppression of the formation of a continuous Al4C3 layer at the interface and a process of dissolution and reconstruction of the SiC surface, due to the increased Si concentration of the Al-Si alloys, are the key factors to explain the observed behaviour.