Sol-gel prepared MoO3-WO3 thin-films for O2 gas sensing
Sol-gel prepared MoO3-WO3 thin-films for O2 gas sensing
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DOI：
10.1016/s0925-4005(01)00738-9
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发表时间：
2001-06-15
影响因子：
8.4
通讯作者：
Kalantar-zadeh, K
中科院分区：
文献类型：
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作者：
Galatsis, K;Li, YX;Kalantar-zadeh, K
研究了三氧化钼和三氧化钨（MoO 3-WO 3）混合金属氧化物薄膜的氧敏特性。通过溶胶-凝胶法在硅（100）和蓝宝石衬底上制备了不同MoO 3-WO 3比例的薄膜样品。SEM分析表明存在MoO 3正交相，减弱为WO 3占主导地位的混合系统。MoO 3-WO 3传感器对10 - 10，000 ppm范围内的O-2浓度具有线性响应。在420 ℃的最佳温度下，MoO 3-WO 3薄膜的响应是稳定的和可重复的。(C)2001 Elsevier Science B. V.保留所有权利。
Oxygen gas sensing properties of molybdenum trioxide and tungsten trioxide (MoO3-WO3) mixed metal oxide thin-films are investigated. Various MoO3-WO3 ratio thin-film samples are deposited onto silicon (1 0 0) and sapphire substrates via the sol-gel route. SEM analysis showed the presence of MoO3 orthorhombic phase, abating as WO3 dominated the mixed system. MoO3-WO3 sensors exhibited a linear response to O-2 concentrations varying from 10 to 10,000 ppm. The MoO3-WO3 film response was stable and reproducible operating at an optimal temperature of 420 degreesC. (C) 2001 Elsevier Science B.V. All rights reserved.