FINITE-ELEMENT SIMULATION OF GAAS MESFETS WITH LATERAL DOPING PROFILES AND SUBMICRON GATES
FINITE-ELEMENT SIMULATION OF GAAS MESFETS WITH LATERAL DOPING PROFILES AND SUBMICRON GATES
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DOI：
10.1109/t-ed.1976.18533
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发表时间：
1976-01-01
影响因子：
3.1
通讯作者：
HADDAD, GI
中科院分区：
文献类型：
--
作者：
BARNES, JJ;LOMAX, RJ;HADDAD, GI
GaAs MESFET的二维有限元模拟的结果。模拟用于确定漏极电流和漏极电流以及二维电压、电子密度和电场分布。结果表明，在栅漏之间的高电场区放置一个补偿掺杂区，通过减小速度饱和效应来增加漏电流和漏电流。具有不同沟道高度的器件的饱和区的MESFET的漏极和漏极电导与以前的分析进行了比较。
Results of a two-dimensional finite-element simulation of a GaAs MESFET are presented. The simulation is used to determine the drain current and transconductance as well as the two-dimensional voltage, electron density, and electric-field distributions. It is shown that placement of a compensated doping region in the high electric-field region between gate and drain increases the drain current and transconductance by reducing the velocity-saturation effect. The transconductance and drain conductance of the MESFET in the saturation region of devices having different channel heights are compared with previous analysis.