Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes
Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes
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DOI：
10.1109/tns.2013.2243469
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发表时间：
2013-03
影响因子：
1.8
通讯作者：
T. Makino;M. Deki;N. Iwamoto;S. Onoda;N. Hoshino;H. Tsuchida;T. Hirao;T. Ohshima
中科院分区：
文献类型：
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作者：
T. Makino;M. Deki;N. Iwamoto;S. Onoda;N. Hoshino;H. Tsuchida;T. Hirao;T. Ohshima
在4 H-SiC肖特基势垒二极管（SBD）中观察到了重离子诱导的反常电荷收集现象。有人建议，相对于外延层的厚度，离子能量和电场强度的SBD的入射离子的范围是理解这种观察和理解SEB机制的关键。
Heavy-ion induced anomalous charge collection was observed in 4H-SiC Schottky Barrier Diodes (SBDs). It is suggested that the range of the incident ions with respect to the thickness of the epi-layer, ion energy, and electric-field intensity of the SBD is the key to understanding this observation and understanding the SEB mechanism.