Hybrid gap plasmon GaAs nanolasers
Hybrid gap plasmon GaAs nanolasers
复制标题
混合间隙等离子体 GaAs 纳米激光器
DOI：
10.1063/1.5008320
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发表时间：
2017
影响因子：
4
通讯作者：
R. Oulton
中科院分区：
文献类型：
--
作者：
Ngoc B. Nguyen;M. Nielsen;L. Lafone;E. Clarke;P. Fry;R. Oulton
具有亚波长尺度尺寸的紧凑半导体激光器严重依赖于由于其纳米腔的大表面积与体积比而具有低表面复合的材料。此外，对半导体纳米结构的依赖导致了主要的自下而上的制造方法，这阻碍了可扩展和实际应用。在这封信中，我们提出了光刻构造的混合间隙等离子体纳米激光器，使用在室温下工作的大块砷化镓的增益。纳米激光器建立在带有InGaP钝化层的GaAs悬浮膜上。激光谐振器仅通过在这些砷化镓膜上绘制金图案来定义，从而消除了为了光学约束而蚀刻半导体的需要，这将引入额外的表面复合。对这些器件的模态增益和损耗的分析表明，在4-5×1018 cm−3范围内的阈值载流子密度是必要的-电流密度低至6-8 kA时可能实现…
Compact semiconductor lasers with sub-wavelength-scale dimensions rely heavily on materials with low surface recombination due to the large surface area to volume ratios of their nano-cavities. Furthermore, the reliance on semiconductor nanostructures has led to predominantly bottom-up fabrication approaches, which has hindered scalable and practical applications. In this letter, we present lithographically constructed hybrid gap plasmon nanolasers using the gain of bulk GaAs operating at room temperature. The nanolasers are built on GaAs suspended membranes with InGaP passivation layers. Laser resonators are defined only by patterning gold on top of these GaAs membranes, thus eliminating the need to etch the semiconductor for optical confinement, which would introduce additional surface recombination. An analysis of the modal gain and losses in these devices suggests that threshold carrier densities in the range of 4–5×1018 cm−3 are necessary—potentially achievable with current densities as low as 6–8 kA...
影响因子：
3.6
作者：
T. Duffin;M. Nielsen;F. Diaz;S. Palomba;S. Maier;R. Oulton
通讯作者：
T. Duffin;M. Nielsen;F. Diaz;S. Palomba;S. Maier;R. Oulton
影响因子：
3.5
作者：
M. Wille;C. Sturm;T. Michalsky;R. Röder;C. Ronning;R. Schmidt‐Grund;M. Grundmann
通讯作者：
M. Wille;C. Sturm;T. Michalsky;R. Röder;C. Ronning;R. Schmidt‐Grund;M. Grundmann