STM analysis of wet-chemically prepared H-Si(001) surface
STM analysis of wet-chemically prepared H-Si(001) surface
复制标题
湿法化学制备的 H-Si(001) 表面的 STM 分析
DOI：
10.1016/0169-4332(96)00316-9
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发表时间：
1996
影响因子：
6.7
通讯作者：
H. Tokumoto
中科院分区：
文献类型：
--
作者：
Y. Morita;H. Tokumoto
采用超高真空扫描隧道显微镜（UHV-STM）在原子尺度上测量了湿法制备的Si（001）表面的微粗糙度。经2.5%-HF溶液（pH= 2）处理后，表面粗糙度均方根（rms）值约为1.4A˚，表面呈现不明显的Si（001）表面阶梯状结构。另一方面，在控制去除氧化层的条件下，HF:HCl= 1:19溶液（pH< 1）处理后的STM图像显示出清晰的阶梯结构，没有蚀刻坑，表面粗糙度的均一值与2.5% HF处理后的样品相同。
Microroughness of wet-chemically prepared Si(001) surfaces was measured in an atomic scale by ultrahigh vacuum scanning tunneling microscopy (UHV-STM). On the surface treated by 2.5%-HF solution (pH= 2), the root mean square (rms) value for the surface roughness was about 1.4A˚, whose surface exhibited the unclear steplike structure of Si(001) surface. On the other hand, the STM images on the surface treated byHF:HCl= 1:19 solution (pH< 1) under the controlled removal of the oxide layer, the STM image exhibited clear step structure without etch pits, and the rms value for the surface roughness is the same as that of the 2.5% HF treated sample.