Anisotropic grain growth in TiO2-doped alumina
Anisotropic grain growth in TiO2-doped alumina
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DOI：
10.1016/0921-5093(94)06516-0
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发表时间：
1995-06
期刊：
影响因子：
6.4
通讯作者：
D. Horn;G. Messing
中科院分区：
文献类型：
--
作者：
D. Horn;G. Messing
研究了高密度超细（0.4 μm）基质中TiO 2掺杂氧化铝的晶粒生长。观察到正常晶粒长大、各向异性晶粒长大和异常晶粒长大。含有0.15-0.4重量% TiO 2，样品最初经历正常的晶粒生长，直到获得晶体微观结构和各向异性晶粒生长成核。大的各向异性的片晶状晶粒通过分步生长过程快速生长，直到大晶粒的撞击基本上停止进一步生长。各向异性颗粒的体积分数范围为20至100体积%这表明依赖于颗粒形状和体积分数的物理性质可以被定制。提出了各向异性晶粒原位生长的临界条件。
Grain growth in TiO2-doped alumina was studied in a high density, ultrafine matrix (0.4 μm. Normal grain growth, anisotropic grain growth and abnormal grain growth were observed. With 0.15-0.4 wt.% TiO2, samples initially undergo normal grain growth until a crystal microstructure is attained and anisotropic grain growth in nucleated. Large anisotropic, platelet-shaped grains grow rapidly by a step growth process until impingement of the large grains essentially stops further growth. The volume fraction of anisotropic grains ranged from 20 to 100 vol.% suggesting that physical properties dependent on grain shape and volume fraction can be tailored. Critical requirements are proposed for the in situ growth of anisotropic grains.