Thermoelectric properties of and devices based on free-standing GaN
Thermoelectric properties of and devices based on free-standing GaN
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基于独立式 GaN 的热电特性和器件
DOI：
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发表时间：
2005
期刊：
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通讯作者：
A. Yamamoto
中科院分区：
文献类型：
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作者：
S. Yamaguchi;Ryohei Izaki;Nakaba Kaiwa;A. Yamamoto
我们研究了自支撑GaN的热电特性，并利用这种GaN制作了热电功率器件。在373 ~ 973 K范围内，电阻率ρ随温度的升高而增大，塞贝克系数α随温度的升高而略有增大。功率因数随温度升高而降低，在373 K时达到最大值7.0×10− 4 W scinmK 2。在153 K的温差下，器件的最大输出电压Vop为28 mV，最大输出功率Pmax为3.35μW。Pmax和Vop是温差（ΔT）的函数，即Pmax =（ΔT）n（n=2.14）和Vop =（ΔT）n（n=1.06）。
We have studied the thermoelectric properties of free-standing GaN and fabricated a themoelectric power device using this GaN. The electrical resistivity ρ increased and the Seebeck coefficient α slightly increased with increasing temperature in the range from 373 K to 973 K. The power factor decreased with increasing temperature, and its maximum value was 7.0×10−4W∕mK2 at 373 K. The device showed a maximum output voltage Vop and an output power Pmax of 28 mV and 3.35μW at temperature difference of 153 K, respectively. The Pmax and Vop were functions of the temperature difference (ΔT), namely,Pmax∼(ΔT)n (n=2.14) and Vop∼(ΔT)n (n=1.06).