Lattice correspondence analysis on the formation mechanism for partial stacking faults in hexagonal close-packed metals
Lattice correspondence analysis on the formation mechanism for partial stacking faults in hexagonal close-packed metals
复制标题
六方密排金属部分堆垛层错形成机制的晶格对应分析
DOI:
10.1016/j.commatsci.2021.110684
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发表时间:
2021-10
影响因子:
3.3
通讯作者:
张喜燕
中科院分区:
文献类型:
--
作者:
李斌;孙奇;张喜燕
Partial stacking faults (PSFs) have been frequently observed inside {10 1-1} and {10 1-2} twins in hexagonal close-packed (HCP) metals. Formation of PSFs, first described by Song and Gray, only displaces atoms on every other basal plane, in stark contrast to conventional SFs created by Shockley partial dislocations in which a global displacement vector can be defined. To experimentally verify this process is challenging. To understand the formation mechanism of the PSFs, in this work, we performed lattice correspondence analysis in atomistic simulations of {10 1-1} and {10 1-2} twinning modes in Mg, Ti and Co. In this strategy, the corresponding planes of the parent to the prismatic plane of the twin were pre-selected and tracked before and after twinning. Then, the atomic positions were examined to reveal atomic stacking position change in the twin due to the formation of the basal SFs. The results show that, indeed, only those atoms on every other basal plane are displaced by the formation of PSFs, indicating that no global displacement vector can be defined and no dislocation activities are involved in the formation of PSFs. Thus, the proposition of PSF is validated. A special configuration of PSFs was observed, which has limited mobility via coordinated atomic shuffles. A detailed analysis on the structural differences between I 1, I 2 stacking faults and PSFs was provided. The formation mechanism of PSFs can be extended to other HCP metals.
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影响因子:
9.4
作者:
Zhang, X. Y.;Li, B.;Liu, Q.
通讯作者:
Liu, Q.
影响因子:
6
作者:
Xianhe Zhang;Bin Li;Q. Sun
通讯作者:
Xianhe Zhang;Bin Li;Q. Sun
DOI:
--
发表时间:
1996
期刊:
--
影响因子:
--
作者:
Xiang Liu;J. B. Adams;F. Ercolessi;J. Moriarty
通讯作者:
Xiang Liu;J. B. Adams;F. Ercolessi;J. Moriarty
影响因子:
3.3
作者:
Henry H. Wu;D. Trinkle
通讯作者:
Henry H. Wu;D. Trinkle
DOI:
10.1016/0502-8205(49)90004-0
发表时间:
1949-01-01
期刊:
PROGRESS IN METAL PHYSICS
影响因子:
--
作者:
COTTRELL, AH
通讯作者:
COTTRELL, AH