Step motion and As desorption on InAs(001) surfaces observed by scanning tunneling microscopy.
Step motion and As desorption on InAs(001) surfaces observed by scanning tunneling microscopy.
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通过扫描隧道显微镜观察 InAs(001) 表面的步进运动和 As 解吸。
DOI：
10.1103/physrevb.48.2807
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
Horikoshi
中科院分区：
文献类型：
--
作者：
Yamaguchi;Horikoshi
用扫描隧道显微镜在高温下直接观察到了InAs(001)表面的台阶运动和As脱附。即使在足以引起单分子台阶和扭结运动的温度下，也能观察到稳定的(2×4)结构。在较高的温度下，可以清楚地观察到具有暗对比度的磁区(解吸区)。这些结果与GaAs表面的结果不同，表明InAs上的(2×4)结构具有很强的横向相互作用
Step motion and As desorption on InAs(001) surfaces are directly observed by scanning tunneling microscopy at high temperatures. Stable (2×4) structures are observed even at temperatures high enough to cause the motion of monomolecular steps and kinks. At higher temperatures, domains with dark contrast (As-desorbed regions) are clearly observed. These results differ from those for GaAs surfaces and indicate strong lateral interaction in (2×4) structures on InAs