High-Responsivity Gate-Tunable Ultraviolet-Visible Broadband Phototransistor Based on Graphene-WS2 Mixed-Dimensional (2D-0D) Heterostructure
High-Responsivity Gate-Tunable Ultraviolet-Visible Broadband Phototransistor Based on Graphene-WS2 Mixed-Dimensional (2D-0D) Heterostructure
复制标题
DOI：
10.1021/acsami.1c18999
复制
发表时间：
2022-01-23
影响因子：
9.5
通讯作者：
Ray, Samit Kumar
中科院分区：
文献类型：
--
作者：
Mukherjee, Shubhrasish;Bhattacharya, Didhiti;Ray, Samit Kumar
近年来，过渡金属二硫属化物（transition metal dichalcogenide，TMDC）量子点的合成取得了很大的进展，其宽带吸收光谱和波长选择性使其在宽带光电探测器中的应用越来越广泛。通过基于溶液的处理，我们展示了由WS 2 QD装饰的化学气相沉积（CVD）石墨烯制成的超大（类似于0.75 mm（2）），紫外-可见（UV-vis）宽带（365-633 nm）光电晶体管作为有源沟道，在环境条件下具有非凡的稳定性和耐久性（直到制造后4个月没有任何光电流退化）。这里，胶体零维（0 D）WS 2量子点被用作光吸收材料，石墨烯作为导电通道。高光响应度（3.1 x 10（2）A/W），中等高探测率（类似于8.9 x 10（8）Jones），以及低噪声等效功率（类似于9.7 × 10（-11）W/Hz0.5）在低偏置电压下获得（V-ds = 1V），光功率低至0.8 μ W/cm（2），可以通过调制栅极偏压进一步调谐。当比较两种不同形貌的WS 2 [量子点和二维（2D）纳米片]之间的光电流时，在基于量子点的器件的情况下观察到光电流的显著增强。基于从头计算密度泛函理论（DFT）的计算进一步支持我们的观察，揭示了量子限制在增强光响应中的作用。我们的工作揭示了一种策略，旨在开发一种可扩展的，具有成本效益的，高性能的混合混合维（2D-0 D）光电探测器与石墨烯WS 2量子点，用于下一代光电应用。
Recent progress in the synthesis of highly stable, eco-friendly, costeffective transition-metal dichalcogenide (TMDC) quantum dots (QDs) with their broadband absorption spectra and wavelength selectivity features have led to their increasing use in broadband photodetectors. With the solution-based processing, we demonstrate a superlarge (similar to 0.75 mm(2)), ultraviolet-visible (UV-vis) broadband (365-633 nm) phototransistor made of WS2 QDs-decorated chemical vapor deposited (CVD) graphene as the active channel with extraordinary stability and durability under ambient conditions (without any degradation of photocurrent until 4 months after fabrication). Here, colloidal zero-dimensional (0D) WS2 QDs are used as the photoabsorbing material, and graphene acts as the conducting channel. A high photoresponsivity (3.1 x 10(2) A/W), moderately high detectivity (similar to 8.9 x 10(8) Jones), and low noise equivalent power (similar to 9.7 x 10(-11) W/Hz0.5) are obtained at a low bias voltage (V-ds = 1 V) at an illumination of 365 nm with optical power as low as similar to 0.8 mu W/cm(2), which can be further tuned by modulating the gate bias. While comparing the photocurrent between two different morphologies of WS2 [QDs and two-dimensional (2D) nanosheets], a significant enhancement of photocurrent is observed in the case of QD-based devices. Ab initio density functional theory (DFT)-based calculations further support our observation, revealing the role of quantum confinement in enhanced photoresponse. Our work reveals a strategy toward developing a scalable, cost-effective, high-performance hybrid mixed-dimensional (2D-0D) photodetector with graphene-WS2 QDs for next-generation optoelectronic applications.