Bonded thin film lithium niobate modulator on a silicon photonics platform exceeding 100 GHz 3-dB electrical modulation bandwidth
Bonded thin film lithium niobate modulator on a silicon photonics platform exceeding 100 GHz 3-dB electrical modulation bandwidth
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DOI：
10.1364/oe.26.023728
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发表时间：
2018-09-03
期刊：
影响因子：
3.8
通讯作者：
Mookherjea, Shaman
中科院分区：
文献类型：
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作者：
Weigel, Peter O.;Zhao, Jie;Mookherjea, Shaman
我们展示了一个超高带宽马赫-曾德尔电光调制器（EOM），基于铸造制造的硅（Si）光子学，使用传统的光刻和晶圆级制造，氧化物键合在200 ℃的锂钛酸盐（LN）薄膜。我们的设计集成了硅光子光输入/输出和光学元件，如定向耦合器和低半径弯曲。不需要对薄膜LN进行蚀刻或图案化。这种混合Si-LN MZM实现了超过106 GHz的3 dB电调制带宽，是任何硅光子或锂酸盐（相位）调制器中最高的。(C)根据OSA开放获取出版协议的条款，2018年美国光学学会
We demonstrate an ultra-high-bandwidth Mach-Zehnder electro-optic modulator (EOM), based on foundry-fabricated silicon (Si) photonics, made using conventional lithography and wafer-scale fabrication, oxide-bonded at 200C to a lithium niobate (LN) thin film. Our design integrates silicon photonics light input/output and optical components, such as directional couplers and low-radius bends. No etching or patterning of the thin film LN is required. This hybrid Si-LN MZM achieves beyond 106 GHz 3-dB electrical modulation bandwidth, the highest of any silicon photonic or lithium niobate (phase) modulator. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement