Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga,Mn)As
Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga,Mn)As
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DOI：
10.1103/physrevlett.96.096601
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发表时间：
2006-03-10
影响因子：
8.6
通讯作者：
Ohno, H
中科院分区：
文献类型：
--
作者：
Yamanouchi, M;Chiba, D;Ohno, H
利用垂直磁各向异性的（Ga，Mn）As的磁光克尔效应，观测到了电流感生畴壁运动，其速度跨越5个数量级，最高可达22 m/s。的数据被用来验证自旋转移的Slonczewski机制，以及在畴壁区域的自旋翻转过渡所产生的扭矩的理论。在低电流畴壁蠕变的证据被发现。
Current-induced domain-wall motion with velocity spanning over 5 orders of magnitude up to 22 m/s has been observed by the magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.