Phase-sensitive Terahertz Self-heterodyne System Based on Photodiode and Low-temperature grown GaAs Photoconductor at 1.55μm
Phase-sensitive Terahertz Self-heterodyne System Based on Photodiode and Low-temperature grown GaAs Photoconductor at 1.55μm
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基于光电二极管和1.55μm低温生长GaAs光电导体的相敏太赫兹自外差系统
DOI：
10.1109/jsen.2012.2218281
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
and T.Nagatsuma
中科院分区：
文献类型：
--
作者：
S.Hisatake;G.Kitahara;N.Kukutsu;Y.Fukada;N.Yoshimoto;and T.Nagatsuma
提出并实现了一种基于1.55 μm光子技术的连续太赫兹波相位变化测量技术。太赫兹波的产生是基于使用单行进载波光电二极管的光混合。太赫兹波的检测是基于外差混频的太赫兹波，使用低温生长的GaAs光电导体与频移光子本振信号。在300 GHz频率下测量了85 μm厚的单层纸引起的相移。
We propose and demonstrate a technique for phase change measurement of a continuous terahertz (THz) wave, based on 1.55- μm photonic techniques. The generation of the THz wave is based on photomixing using a uni-traveling-carrier photodiode. The detection of the THz wave is based on heterodyne mixing of the THz wave, using a low-temperature-grown GaAs photoconductor with frequency-shifted photonic local oscillator signal. The measurement of a phase shift induced by a single sheet of paper with 85-μm thickness has been demonstrated at 300 GHz.