Thinning of SiC Wafer by Plasma Chemical Vaporization Machining
Thinning of SiC Wafer by Plasma Chemical Vaporization Machining
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DOI：
10.4028/www.scientific.net/msf.645-648.857
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发表时间：
2010-04
期刊：
影响因子：
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通讯作者：
Y. Sano;Takehiro Kato;Tsutomu Hori;K. Yamamura;H. Mimura;Y. Katsuyama;K. Yamauchi
中科院分区：
文献类型：
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作者：
Y. Sano;Takehiro Kato;Tsutomu Hori;K. Yamamura;H. Mimura;Y. Katsuyama;K. Yamauchi
为了降低垂直功率晶体管的导通电阻，需要在器件加工后进行背面减薄。然而，由于SiC晶圆的高硬度和高脆性，在薄化过程中容易产生裂纹和剥落，传统的机械加工方法难以实现高成品率的薄化。在本研究中，采用等离子体化学汽化加工（PCVM）方法对一个小矩形SiC样品进行了薄化处理。结果，样品成功地减薄到40m，没有任何开裂或碎裂。薄化后的表面粗糙度得到改善，晶圆片边缘自动变圆。因此，PCVM可以作为SiC晶圆减薄的有效方法。
In order to reduce the on-resistance in vertical power transistors, backside thinning is required after device processing. However, it is difficult to thin an SiC wafer with a high yield rate by conventional mechanical machining because its high hardness and brittleness cause cracking and chipping during thinning. In this study, a small rectangular SiC sample was thinned by plasma chemical vaporization machining (PCVM), which is plasma etching using atmospheric-pressure plasma. As a result, the sample was successfully thinned to 40 m without any cracking or chipping. Furthermore, the surface roughness was improved after thinning, and the edge of the wafer became rounded automatically. Therefore, PCVM can be used as an effective method for thinning SiC wafers.