Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn4N epitaxial thin film
Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn4N epitaxial thin film
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DOI：
10.1063/1.4893732
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发表时间：
2014-08
影响因子：
4
通讯作者：
Xiao Shen;A. Chikamatsu;K. Shigematsu;Y. Hirose;T. Fukumura;T. Hasegawa
中科院分区：
文献类型：
--
作者：
Xiao Shen;A. Chikamatsu;K. Shigematsu;Y. Hirose;T. Fukumura;T. Hasegawa
我们报告了通过脉冲激光沉积在 MgO (001) 基板上生长的亚铁磁性 Mn4N (001) 外延薄膜的电传输特性。 Mn4N薄膜呈四方畸变，面外与面内晶格常数之比为0.987，并表现出垂直磁各向异性，有效磁各向异性常数为0.16MJ/m3，与最近报道的分子束外延生长薄膜相当。该薄膜表现出金属输运，室温电阻率为 125 μΩ cm，此外还具有霍尔角正切为 0.023 的大反常霍尔效应。
We report the electrical transport properties of ferrimagnetic Mn4N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn4N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16 MJ/m3, which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125 μΩ cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.