Electrical control of single hole spins in nanowire quantum dots
Electrical control of single hole spins in nanowire quantum dots
复制标题
DOI：
10.1038/nnano.2013.5
复制
发表时间：
2013-03-01
影响因子：
38.3
通讯作者：
Kouwenhoven, L. P.
中科院分区：
文献类型：
--
作者：
Pribiag, V. S.;Nadj-Perge, S.;Kouwenhoven, L. P.
可行的量子计算设备的发展将需要保持量子比特的相干性的能力(1)。半导体量子点中的单电子自旋是量子信息处理的通用平台，但控制退相干仍然是一个相当大的挑战（1-4）。III-V型半导体中的空穴自旋具有独特的性质，如强自旋-轨道相互作用和与核自旋的弱耦合，因此具有增强自旋控制（5-8）和更长的相干时间（8-12）的潜力。先前已经报道了使用量子光学技术在自组装量子点中存在较弱的超精细相互作用（10-12），但是传统III-V异质结构中基于空穴自旋的电子器件的发展受到制造挑战的限制（13）。在这里，我们证明了栅极可调谐的空穴量子点可以在InSb纳米线中形成，并用于证明泡利自旋封锁和单孔自旋的电控制。该器件在空穴和电子量子点之间完全可调谐，从而可以直接比较两种状态下的超精细相互作用强度、g因子和自旋封锁各向异性。
The development of viable quantum computation devices will require the,ability to preserve the coherence of quantum bits (qubits)(1). Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable challenge(1-4). Hole spins in III-V semiconductors have unique properties, such as a strong spin-orbit interaction and weak coupling to nuclear spins, and therefore, have the potential for enhanced spin control(5-8) and longer coherence times(8-12). A weaker hyperfine interaction has previously been reported in self-assembled quantum dots using quantum optics techniques(10-12), but the development of hole-spin-based electronic devices in conventional III-V heterostructures has been limited by fabrication challenges(13). Here, we show that gate-tunable hole quantum dots can be formed in InSb nanowires and used to demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tunable between hole and electron quantum dots, which allows the hyperfine interaction strengths, g-factors and spin blockade anisotropies to be compared directly in the two regimes.