Investigation of Silicon Oxide Thin Films Prepared by Atomic Layer Deposition Using SiH2Cl2 and O3 as the Precursors
Investigation of Silicon Oxide Thin Films Prepared by Atomic Layer Deposition Using SiH2Cl2 and O3 as the Precursors
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以 SiH2Cl2 和 O3 为前驱体原子层沉积制备氧化硅薄膜的研究
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
C. Park
中科院分区：
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作者：
Joo;U. Kim;Chang;S. Rha;Won;C. Park
通过在300°C下交替暴露SiH 2Cl 2和O3（1.5at%）/O2，通过原子层沉积（ALD）在p型Si（100）衬底上沉积二氧化硅薄膜。O3是通过O2输送线内的电晕放电产生的。氧化膜主要由O3而不是O2沉积，因为在相同的工艺条件下，我们不能观察到没有电晕放电的基底上的沉积膜。沉积膜的生长速率随SiH 2Cl 2和O3同时暴露量的增加而线性增加，当反应物暴露量大于3.6×109 L时，沉积膜的生长速率在约0.35 nm/cycle处达到饱和。需要比SiH 2Cl 2更大量的O3/O2来获得饱和沉积反应。当SiH_2Cl_2暴露量为1.2×109 L时，O_3/O_2暴露量变化时，氧化膜的生长速率随着O_3暴露量的增加而增加，当O_3/O_2暴露量大于2.4×109 L时，氧化膜的生长速率达到饱和，约为0.28nm/cycle。沉积膜的组成也随O3/O2暴露而变化。随着O3/O2暴露量的增加，Si/O比逐渐降低至0.5。最后，我们还比较了ALD薄膜的特性与传统的化学气相沉积（CVD）方法沉积的薄膜。通过ALD方法在300°C下制备的氧化硅膜显示出与通过低压CVD（LPCVD）和大气压CVD（APCVD）在400至800°C范围内的沉积温度下沉积的膜相当的化学计量、湿法蚀刻速率和平均表面粗糙度
Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) by alternating SiH2Cl2 and O3(1.5 at%)/O2 exposures at 300°C. O3 was generated by corona discharge inside the delivery line of O2. The oxide film was deposited mainly from O3, not from O2, because we could not observe the deposited film on the substrate without corona discharge under the same process condition. The growth rate of the deposited films increased linearly with increasing amount of simultaneous SiH2Cl2 and O3 exposures, and was saturated at approximately 0.35 nm/cycle with the reactant exposures of more than 3.6×109 L. A larger amount of O3/O2 than that of SiH2Cl2 was required to obtain a saturated deposition reaction. When the amount of O3/O2 exposure was varied at a fixed SiH2Cl2 exposure of 1.2×109 L, the growth rate of oxide film increased with O3 exposure and was saturated at approximately 0.28 nm/cycle with O3/O2 exposure of more than 2.4×109 L. The composition of the deposited film also varied with O3/O2 exposure. The Si/O ratio gradually decreased to 0.5 with increasing amount of O3/O2 exposure. Finally, we also compared the characteristics of the ALD films with those of the films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by the ALD method at 300°C showed stoichiometry, wet etch rate and average surface roughness comparable to those of the films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at deposition temperatures ranging from 400 to 800°C