Experimental characterization and modeling of the contact resistance of Cu–Cu bonded interconnects
Experimental characterization and modeling of the contact resistance of Cu–Cu bonded interconnects
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DOI：
10.1063/1.3074503
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发表时间：
2009-02
影响因子：
3.2
通讯作者：
H. L. Leong;C. Gan;R. I. Made;C. Thompson;K. Pey;Hongyu Li
中科院分区：
文献类型：
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作者：
H. L. Leong;C. Gan;R. I. Made;C. Thompson;K. Pey;Hongyu Li
定量研究了表面粗糙度和施加的载荷对三维 Cu-Cu 键合互连的特定接触电阻的影响。在一定载荷下具有不同表面粗糙度或在不同施加载荷下具有相似表面粗糙度的接合铜层上进行晶圆级热压接合。实验结果表明，随着Cu键合层表面粗糙度的增大或键合载荷的减小，键合互连的比接触电阻增大。提出了一个模型，该模型量化了比接触电阻和真实接触面积（这是表面粗糙度和施加载荷的函数）之间的关系。通过真实的接触面积，可以通过接触电阻的电测量来预测粘合界面的完整性。
The effects of the surface roughness and applied loads on the specific electrical contact resistance of three-dimensional Cu–Cu bonded interconnects have been quantitatively investigated. Wafer-level thermocompression bonding was carried out on bonded Cu layers with either different surface roughness at a certain load or with similar surface roughness at different applied loads. Experimental results show that as the surface roughness of the Cu bonding layer increases or as the bonding load decreases, the specific contact resistance of the bonded interconnects increases. A model is presented which quantifies the relationship between the specific contact resistance and the true contact area (which is a function of the surface roughness and applied load). Through the true contact area, the integrity of a bonded interface may be predicted from the electrical measurement of the contact resistance.