Optical Ring-Resonator Modulator Based on 0.8 μm CMOS Technology
Optical Ring-Resonator Modulator Based on 0.8 μm CMOS Technology
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DOI：
10.1088/0256-307x/26/10/104206
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发表时间：
2009-10
影响因子：
3.5
通讯作者：
Wang Fan;Qiu Chen;Simiao Xiao;Y. Hao;Xiaoqing Jiang;Ming-hua Wang;Jianyi Yang
中科院分区：
文献类型：
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作者：
Wang Fan;Qiu Chen;Simiao Xiao;Y. Hao;Xiaoqing Jiang;Ming-hua Wang;Jianyi Yang
采用成熟的0.8 μ m互补金属氧化物半导体（CMOS）工艺，在绝缘体上硅（SOI）材料上制作了环形谐振腔调制器。该装置的配置是基于一个单一的环形谐振器耦合到一个总线波导。波导宽度约为1 μ m。p-i-n结用于注入电流。实验结果表明，获得了品质因数大于40000的环形谐振腔。调制器的最大消光比大于10dB。速度为几十纳秒，相应的注入电流小于10mA。
Optical ring-resonator-based modulators are fabricated on the silicon-on-insulator material through the mature commercial 0.8 μm complementary metal oxide semiconductor foundry. The device configuration is based on a single ring resonator coupled to one bus waveguide. The waveguide widths are about 1 μm. The p-i-n junctions are employed to inject currents. The experimental result shows that the ring resonators with the quality factor of above 40000 are obtained. The maximum extinction ratio of the modulators is larger than 10dB. The speed is tens of nanoseconds, and the corresponding injected current is smaller than 10mA.