Variation of lateral doping—A new concept to avoid high voltage breakdown of planar junctions
Variation of lateral doping—A new concept to avoid high voltage breakdown of planar junctions
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DOI：
10.1109/iedm.1985.190917
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发表时间：
1985
期刊：
影响因子：
--
通讯作者：
R. Stengl;U. Gosele
中科院分区：
文献类型：
--
作者：
R. Stengl;U. Gosele
本文提出了高压平面结的新概念。通过氧化物掩模中的小开口的注入和随后的驱入，获得在结的端部处的空间电荷区域的必要加宽，从而导致受控的涂抹的掺杂剂分布。实验结果表明了该概念的有效性。
In this paper a new concept for high voltage planar junctions is presented. The necessary widening of the space charge region at the end of the junction is obtained by implantation through small openings in the oxide mask and subsequent drive-in, leading to a controlled smeared-out dopant distribution. Experimental results show the validity of the concept.