ATOMIC LAYER GROWTH OF OXIDE THIN-FILMS WITH PEROVSKITE-TYPE STRUCTURE BY REACTIVE EVAPORATION
ATOMIC LAYER GROWTH OF OXIDE THIN-FILMS WITH PEROVSKITE-TYPE STRUCTURE BY REACTIVE EVAPORATION
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DOI：
10.1063/1.351536
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发表时间：
1992-10-01
影响因子：
3.2
通讯作者：
TERAUCHI, H
中科院分区：
文献类型：
--
作者：
IIJIMA, K;TERASHIMA, T;TERAUCHI, H
利用反射高能电子衍射（RHEED）研究了反应蒸发法制备BaTiO3和SrTiO3薄膜的外延生长。研究采用了金属元素在氧气气氛中共蒸发和交替蒸发两种生长方法。通过在生长表面交替提供Ba或Sr和Ti来实现原子层的生长。在共蒸发的情况下，外延生长发生在二维单元-单元-单元模式。每个晶胞的表面都被（TiO2）层终止。利用RHEED振荡监测薄膜厚度，制备了BaTiO3/SrTiO3的人工超晶格。
Epitaxial growth of BaTiO3 and SrTiO3 films by the reactive evaporation method was investigated using reflection high-energy electron diffraction (RHEED). The investigations were carried out using two growth methods: coevaporation and alternate evaporation of the metal elements in an oxygen atmosphere. Atomic layer growth was achieved by the alternate supply of Ba or Sr and Ti on the growing surface. In the case of coevaporation, epitaxial growth occurred in a two-dimensional unit-cell-by-unit-cell mode. The surface of each unit cell is terminated by a (TiO2) layer. Artificial superlattices of BaTiO3/SrTiO3 were fabricated by monitoring the film thickness with the RHEED oscillations.