Direct calculation of interfacial energetics: Roles of axial commensuration and strain in epitaxial growth.
Direct calculation of interfacial energetics: Roles of axial commensuration and strain in epitaxial growth.
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界面能量的直接计算：轴向补偿和应变在外延生长中的作用。
DOI：
10.1103/physrevb.35.8042
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发表时间：
1987
期刊：
影响因子：
--
通讯作者：
Das Sarma S
中科院分区：
文献类型：
--
作者：
Kobayashi;Das Sarma S
静态能量的单层过度生长的晶体衬底被认为是详细的超越刚性晶格近似。获得两个不同的结构之间的相干界面的必要条件进行了仔细检查轴向的双折射。获得晶格失配界面的应变和应变能，我们研究：（i）稳定微晶形成的成核尺寸，以及（ii）正失配和负失配之间的外延生长差异。通过叠加适当的两体相互作用项得到模型势，我们将锌-β-型系统与半导体超晶格生长联系起来。
Static energetics of monolayer overgrowth on a crystalline substrate is considered in detail by going beyond the rigid-lattice approximation. Conditions necessary to obtain a coherent interface between two dissimilar structures are carefully examined in terms of axial commensuration. Obtaining the strain and the strain energy for lattice-mismatched interfaces, we investigate: (i) the nucleation size for stable microcrystallite formation, and (ii) the difference in epitaxial growth between positive misfit and negative misfit. Using model potentials obtained by superposing suitable two-body interaction terms, we make a connection with semiconductor superlattice growth for zinc-blende-type systems.