Influence of Direct Au-Bump Formation on Metal Oxide Semiconductor Field Effect Transistor
Influence of Direct Au-Bump Formation on Metal Oxide Semiconductor Field Effect Transistor
复制标题
直接形成金凸块对金属氧化物半导体场效应晶体管的影响
DOI：
10.1143/jjap.41.2714
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发表时间：
2002
影响因子：
1.5
通讯作者：
T. Asano
中科院分区：
文献类型：
--
作者：
N. Watanabe;T. Asano
本文研究了金属氧化物半导体场效应晶体管（MOSFET）上直接形成Au凸点后，MOSFET电特性的变化。通过将Au凸点形成产生的动态应变和残余应变的空间分布与MOSFET电特性变化的空间分布相关联来进行研究。应变测量使用链的Si薄膜计。凸块的形成没有显著影响阈值电压Vth。然而，在MOSFET的介电常数中观察到一些变化。观察到的gm变化在凸块中心最大，其值小于3.5%。作为动态应变和残余应变测量的结果，发现残余应变引起MOSFET的介电常数gm的变化，尽管在向Au凸块施加超声振动期间产生的动态应变远高于残余应变。研究还发现，对于n沟道和p沟道，gm变化的方向（+或-）是相反的，gm变化的幅度取决于晶体学取向。
Change in the electrical characteristic of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) owing to direct Au bump formation on the MOSFET has been investigated. The investigation was carried out by correlating the spatial distribution of both dynamic strain and residual strain generated by Au bump formation with that of change in the electrical characteristic of the MOSFET. Strain was measured using chains of Si thin film gauges. The bump formation did not significantly affect threshold voltage Vth. However, some change was observed in the transconductance gm of the MOSFET. The observed change in gm was maximum at the center of the bump and its value was less than 3.5%. As the result of dynamic strain and residual strain measurements, it is found that residual strain causes the change in the transconductance gm of MOSFETs, although dynamic strain generated during application of the ultrasonic vibration to the Au bump is much higher than residual strain. It is also found that the direction of gm change (+ or -) is opposite for n-channel and p-channel and that the magnitude of gm change is dependent on the crystallographic orientation.