Effects of growth sequence on atomic level interfacial structures characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure OMVPE
Effects of growth sequence on atomic level interfacial structures characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure OMVPE
复制标题
生长顺序对低压OMVPE生长GaInP/GaAs/GaInP双异质结构原子级界面结构特征的影响
DOI：
--
复制
发表时间：
2004
期刊：
影响因子：
--
通讯作者：
T.YOSHIKANE
中科院分区：
文献类型：
--
作者：
Y.FUJIWARA;M.SUZUKI;M.YOSHIDA;M.YOSHIDA;M.YOSHIDA;T.YOSHIKANE
