Development of radiation sensor based on Pt/ZnO Schottky diode
Development of radiation sensor based on Pt/ZnO Schottky diode
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DOI：
10.1109/nssmic.2011.6154669
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发表时间：
2011-10
期刊：
影响因子：
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通讯作者：
S. Narita;Y. Nishibori;H. Naito;H. Ito;H. Endo;T. Chiba;Y. Sakemi;M. Itoh;H. Yoshida
中科院分区：
文献类型：
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作者：
S. Narita;Y. Nishibori;H. Naito;H. Ito;H. Endo;T. Chiba;Y. Sakemi;M. Itoh;H. Yoshida
我们在水热法生长的单晶衬底上制备了Pt/ZnO肖特基二极管。对二极管的输出信号进行了X射线和α射线入射分析，观察到了对这些辐射的清晰响应。我们已经证明了基于ZnO的电离辐射器件的潜力。此外，我们还研究了ZnO材料在高能质子束辐照下的抗辐照性能。即使在1015质子/cm 2的照射之后，电特性也没有显著改变。
We have fabricated the Pt/ZnO Schottky diode based on the single crystal substrate grown by the hydrothermal growth method. The output signals from the diode were analyzed for the incidence of x-rays and α-rays, and the clear responses for those radiations were observed. We have demonstrated a potential of the ZnO based device for ionizing radiations. In addition, we investigated the radiation hardness of the ZnO material irradiating the diode sample with the high energy proton beam. The electrical characteristics have not been significantly changed even after irradiation of 1015 protons/cm2.