Noble gas influence on reactive radio frequency magnetron sputter deposition of TiN films
Noble gas influence on reactive radio frequency magnetron sputter deposition of TiN films
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DOI：
10.1016/s0042-207x(98)00264-4
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发表时间：
1998-12-01
期刊：
影响因子：
4
通讯作者：
Musa, G
中科院分区：
文献类型：
--
作者：
Lungu, CP;Futsuhara, M;Musa, G
研究了惰性气体Ar、He和Ne对反应射频磁控溅射沉积TiN的影响。对等离子体进行了光学诊断，详细研究了钛原子发射（395.82 nm）和第一负系统N-2（+）发射（391.44 nm）的特性。Ti（395.82 nm）/Ni-2（+）（391.44 nm）发射强度之间的比值与薄膜的沉积速率有关。在（Ar + N-2 + Ne），（Ar + N-2 + He）三元混合气体中，氖或氦的存在使TiN（111）峰强度增强。(C)1998爱思唯尔科技有限公司版权所有。
The noble gases' (Ar, He and Ne) influence on the TiN deposition by reactive radio frequency (rf) magnetron sputtering have been studied. Effects of the interelectrode distance and the discharge power were also taken into account The optical diagnostics of plasma was carried out The characteristics of Ti emission (395.82 nm) from titanium atoms and N-2(+) emission (391.44 nm) of the first negative system were investigated in detail. Ti (395.82 nm)/Ni-2(+) (391.44 nm) intensity ratio between Ti/N-2 emission was correlated with the deposition rate of the films. The enhancement of the TiN (111) peak intensity in the neon or helium presence in the ternary gas mixtures (Ar + N-2 + Ne), (Ar + N-2 + He) was emphasized. (C) 1998 Elsevier Science Ltd. All rights reserved.