Parameter optimization for an ICP deep silicon etching system
Parameter optimization for an ICP deep silicon etching system
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DOI：
10.1007/s00542-006-0211-2
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发表时间：
2007-03-01
影响因子：
2.1
通讯作者：
Cheng, C. H.
中科院分区：
文献类型：
--
作者：
Chen, S. C.;Lin, Y. C.;Cheng, C. H.
本文旨在研究电感耦合等离子体-反应离子刻蚀系统中硅微纳米刻蚀的参数优化问题。源功率和SF6气体压力是影响刻蚀的两个主要参数。进行了预测试，以估计在给定源功率下SF6气体压力的过程窗口。工艺窗口是一个参数范围，在这个范围内，蚀刻结果是可以接受的，但可能不是最好的。为了获得优异的蚀刻质量，采用田口实验方法对各参数进行了评价，并找到了最佳条件。将源功率和SF6气体压力设置为工艺窗口，对衬底温度、偏置功率、气体循环时间和C4F8气体流速4个参数进行了评价和优化。结果令人印象深刻，实现了直径200nm、间距400nm的柱阵。
The paper aims at investigating the parameter optimization of silicon micro- and nano-sized etching by an inductive coupled plasma-reactive ion etching system. The source power and the SF6 gas pressure are two main parameters that dominate etching. A pre-test is conducted to estimate the process window of the SF6 gas pressure at some given source powers. The process window is a parameter range in which the etching result is acceptable but may not be the best. In order to achieve excellent etching quality, the Taguchi experimental method is applied to evaluate parameters and find their optimum conditions. With the source power and SF6 gas pressure being set into the process window, four parameters, which are the substrate temperature, the bias power, the gas cycle time and the C4F8 gas flow rate, are evaluated and optimized for micro- and nanosized etching. An impressive result, 200-nm-diameter pillar array with the pitch of 400 nm, is realized.