Design of Silicon Phoxonic Crystal Waveguides for Slow Light Enhanced Forward Stimulated Brillouin Scattering
Design of Silicon Phoxonic Crystal Waveguides for Slow Light Enhanced Forward Stimulated Brillouin Scattering
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DOI：
10.1109/jlt.2017.2704615
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发表时间：
2017-07
影响因子：
4.7
通讯作者：
Ruiwen Zhang;Junqiang Sun
中科院分区：
文献类型：
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作者：
Ruiwen Zhang;Junqiang Sun
提出并设计了硅光子晶体波导实现前向受激布里渊散射（FSBS）。具有蜂窝晶格结构的波导能够同时支持光子带隙和声子带隙。通过优化设计，相应的光和声缺陷模被严格限制在线缺陷中，增强了声光耦合，从而产生模内和模间FSBS。采用三维全矢量理论公式分析了结构参数对FSBS增益的影响。从耦合模方程出发，考虑慢光增强因子、双光子效应和自由载流子效应，研究了慢光光子晶体波导中的FSBS过程。结果表明，在200 μm的短波导中，当泵浦功率为100 mW时，可获得18 dB的斯托克斯放大。这种方法使芯片上的FSBS与CMOS技术的实现。
We propose and design the silicon phoxonic crystal waveguides to achieve forward stimulated Brillouin scattering (FSBS). The waveguides with honeycomb-lattice structure are able to support the photonic and phononic band gaps simultaneously. By the optimized design, the corresponding optical and acoustic defect modes are tightly confined in the line defect to enhance acousto-optic coupling, resulting in the intramode and intermode FSBS. The three-dimensional (3D) full-vectorial theoretical formulation is applied to analyze the influences of structural parameters on FSBS gain. By the coupled-mode equations, we explore the FSBS process taking into account the slow light enhanced factor, two-photon and free-carrier absorptions in the slow-light phoxonic crystal waveguide. The results indicate that 18 dB Stokes amplification is obtained with 100 mW pump power in a short waveguide length of 200 μm. Such approach enables the realization of on-chip FSBS with CMOS technologies.