Effect of electrode material on the resistance switching of Cu2O film
Effect of electrode material on the resistance switching of Cu2O film
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DOI：
10.1063/1.2822403
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发表时间：
2007-12
影响因子：
4
通讯作者：
Woo-young Yang;S. Rhee
中科院分区：
文献类型：
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作者：
Woo-young Yang;S. Rhee
在铂/Cu2O/底电极结构上，研究了底电极材料对电阻开关特性的影响。结果表明，Cu2O薄膜的电阻转换需要欧姆接触或低肖特基接触才能产生有效电场。铂、锡、锡、氧化锶和氧化锶属于这一类。对于高肖特基接触，由于Cu2O薄膜中电场不足，整流界面压降较大，无法观察到电阻开关特性。此外，还证实了在Ru的情况下，电极-氧化物界面反应形成的中间层增加了势垒高度，导致了开关失败。电阻转换特性依赖于势垒高度和金属与Cu2O膜之间的反应性。
The effect of the bottom electrode material on the resistance switching characteristics was evaluated on the structure of Pt∕Cu2O/bottom electrode). It was confirmed that Ohmic or low Schottky contact is needed to induce the effective electric field for resistance switching across the Cu2O film. Pt, TiN, TaN, and strontium-ruthenium oxide belong to this group. For high Schottky contact, the resistance switching characteristics could not be observed due to a large voltage drop at the rectifying interface with insufficient electric field in the Cu2O film. Also, it was confirmed that interlayer formation from the reaction at the electrode-oxide interface increased the barrier height and brought about the switching failure in the case of Ru. The resistance switching properties depend on the barrier height and the reactivity between metal and Cu2O film.