Identification of oxygen and zinc vacancy optical signals in ZnO

Identification of oxygen and zinc vacancy optical signals in ZnO
复制标题

DOI:
10.1063/1.2424641
复制
发表时间:
2006-12-25
影响因子:
4
通讯作者:
Willander, M.
Willander, M.
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Borseth, T. Moe;Svensson, B. G.;Willander, M.

文献摘要

被引文献

相似文献

用光致发光光谱法研究了在惰性、富锌和富氧气氛下系统退火的单晶ZnO样品。退火环境的选择与ZnO中经常检测到的深带发射(DBE)的位置之间存在显著的相关性。特别地,在O-2中退火得到了2.35 +/- 0.05 eV的DBE,而在金属Zn存在下退火得到了2.53 +/- 0.05 eV的DBE。作者将前者归因于锌空位(V-Zn)相关缺陷,后者归因于氧空位(V-O)相关缺陷。对V-O和V-Zn峰识别的进一步确认来自于观察,当富O和富zn退火条件切换时,效果是可逆的。在ZnO粉末存在下退火后,没有V-Zn或v - o相关带的迹象,但作者观察到一个低强度的黄色发光带,峰值在2.17 eV,可能与Li有关,Li是水热生长ZnO中常见的杂质。(c) 2006年美国物理研究所。
Photoluminescence spectroscopy has been used to study single crystalline ZnO samples systematically annealed in inert, Zn-rich and O-rich atmospheres. A striking correlation is observed between the choice of annealing ambient and the position of the deep band emission (DBE) often detected in ZnO. In particular, annealing in O-2 results in a DBE at 2.35 +/- 0.05 eV, whereas annealing in the presence of metallic Zn results in DBE at 2.53 +/- 0.05 eV. The authors attribute the former band to zinc vacancy (V-Zn) related defects and the latter to oxygen vacancy (V-O) related defects. Additional confirmation for the V-O and V-Zn peak identification comes from the observation that the effect is reversible when O- and Zn-rich annealing conditions are switched. After annealing in the presence of ZnO powder, there is no indication for the V-Zn- or V-O-related bands, but the authors observe a low intensity yellow luminescence band peaking at 2.17 eV, probably related to Li, a common impurity in hydrothermally grown ZnO. (c) 2006 American Institute of Physics.