Flexible Self-Powered Photoelectrochemical Photodetector with Ultrahigh Detectivity, Ultraviolet/Visible Reject Ratio, Stability, and a Quasi-Invisible Functionality Based on Lift-Off Vertical (Al,Ga)N Nanowires
Flexible Self-Powered Photoelectrochemical Photodetector with Ultrahigh Detectivity, Ultraviolet/Visible Reject Ratio, Stability, and a Quasi-Invisible Functionality Based on Lift-Off Vertical (Al,Ga)N Nanowires
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基于垂直升离 (Al,Ga)N 纳米线的柔性自供电光电化学光电探测器，具有超高探测率、紫外/可见光抑制比、稳定性和准隐形功能
DOI：
10.1002/admi.202200028
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发表时间：
2022-04-05
影响因子：
5.4
通讯作者：
Lu, Shulong
中科院分区：
文献类型：
--
作者：
Jiang, Min;Zhang, Jianya;Lu, Shulong
具有隐形功能的柔性自供电紫外（UV）光电探测器（PD）对于下一代光电器件的应用至关重要，但制造具有挑战性。在这项工作中，成功提出并展示了一种具有超高紫外/可见光抑制比、超高探测率和透光率这三个优异特性的柔性光电化学（PEC）（Al，Ga）N光电探测器。通过数值模拟还发现，截面吸收面积应该是影响弯曲状态下光生电流的一个不可忽视的因素。在连续长时间工作或保存后，光电探测器的性能能够保持相当稳定。由于GaN连接层的弯曲部分很薄，应力产生的压电电荷对能带和光电流密度的影响有限。因此，当多次高度弯曲或扭曲光电探测器时，仍然能够实现稳定的开关特性和光电流密度。凭借所展示的超高探测率和柔性稳定性，这种光电探测器将在广泛的光电子应用中发挥作用，包括全方位紫外探测和可穿戴智能传感器。
Flexible self-powered ultraviolet (UV) photodetectors (PDs) with an invisible functionality are essential but challenging to be fabricated for the applications of next-generation optoelectronic devices. In this work, a flexible photoelectrochemical (PEC) (Al,Ga)N PD with three excellent characteristics, which are the ultrahigh UV/visible reject ratio, ultrahigh detectivity, and transmissivity, is proposed and demonstrated successfully. By numerical simulations, it is also found that the cross-sectional absorption area should be a nonignorable factor affecting the photogenerated current under bending states. After continuous long-time working or preserving, the PD performance can keep quite stable. Thanks to the pretty thin bending section of GaN connecting layer, the piezoelectric charges generated by stress are proposed to have only a limited effect in the energy band and photocurrent density. Therefore, when bending or twisting the PD at a high degree for many times, both the stable on-off switching characteristics and photocurrent densities can still be achieved. With the demonstrated ultrahigh detectivity and stability of flexibility, this PD would enable a broad range of optoelectronic applications, including omnidirectional UV detection and wearable intelligent sensors.