Strong Room-Temperature Electroluminescence from Ge-on-Si by Precise in-situ Doping Control
Strong Room-Temperature Electroluminescence from Ge-on-Si by Precise in-situ Doping Control
复制标题
通过精确的原位掺杂控制实现硅基 Ge 的强室温电致发光
DOI：
10.1149/09805.0513ecst
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Sawano Kentarou
中科院分区：
文献类型：
--
作者：
Yamada Kodai;Hoshi Yusuke;Sawano Kentarou
我们观察到锗硅的室温强电致发光。通过精确的原位掺杂方法在外延锗内形成Ge引脚结，并且在表面附近进行高密度P δ掺杂以产生低电阻率欧姆接触。为了抑制泄漏电流，EL器件是通过光刻和反应离子蚀刻工艺来定义的。因此，电流-电压特性显示出良好的二极管整流性能，开/关比超过105。在注入电流2.0 kA/cm2左右出现了EL谱，随着注入电流的增大，EL强度急剧增加。这些结果表明，Ge-on-Si引脚结构具有在硅平台上实现高效单片集成激光器的巨大潜力。
We observe strong room-temperature electroluminescence from Ge-on-Si. A Ge pin junction is formed within the epitaxial Ge by the precise in-situ doping method and additionally a high density P delta doping is performed in the vicinity of the surface to create a low resistivity Ohmic contact. An EL device is mesa-defined by the photo-lithography and following reactive ion etching process in order to suppress leak currents. As a result, current-voltage characteristics reveal a good diode rectifying property with an on/off ratio of over 105. The EL spectrum appears at around 2.0 kA/cm2 injection current, and the EL intensity drastically increases with the increase in the injection current. These results indicate that the Ge-on-Si pin structure has a high potential to realize high efficiency lasers monolithically integrated on a Si platform.