Plasma processing technique by combination of plasma-assisted reactive sputtering and plasma annealing for uniform electrical characteristics of InGaZnO thin film transistors formed on large-area substrates
Plasma processing technique by combination of plasma-assisted reactive sputtering and plasma annealing for uniform electrical characteristics of InGaZnO thin film transistors formed on large-area substrates
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等离子体辅助反应溅射和等离子体退火相结合的等离子体处理技术，可在大面积基板上形成均匀的 InGaZnO 薄膜晶体管的电特性
DOI：
10.35848/1347-4065/acbd56
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发表时间：
2023
影响因子：
1.5
通讯作者：
Setsuhara Yuichi
中科院分区：
文献类型：
--
作者：
Takenaka Kosuke;Yoshitani Tomoki;Endo Masashi;Hirayama Hiroyuki;Toko Susumu;Uchida Giichiro;Ebe Akinori;Setsuhara Yuichi
