Room-Temperature Observation of Trapped Exciton-Polariton Emission in GaN/AlGaN Microcavities with Air-Gap/III-Nitride Distributed Bragg Reflectors
Room-Temperature Observation of Trapped Exciton-Polariton Emission in GaN/AlGaN Microcavities with Air-Gap/III-Nitride Distributed Bragg Reflectors
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DOI：
10.1021/acsphotonics.6b00003
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发表时间：
2016-06
期刊：
影响因子：
7
通讯作者：
R. Tao;K. Kamide;M. Arita;S. Kako;Y. Arakawa
中科院分区：
文献类型：
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作者：
R. Tao;K. Kamide;M. Arita;S. Kako;Y. Arakawa
我们证明了捕获激子极化激元发射在室温下从非极性GaN/AlGaN腔夹在空气/AlGaN分布布拉格反射器。非极性AlGaN腔层的纳米级厚度波动特性产生深势阱，引起激子-极化激元的强（面内）局部化。所观察到的量子化激子极化激元状态表现出高达6毫电子伏的大的量子化能量，这得益于III族氮化物的宽带隙。数值模拟很好地解释了实验结果。在这种深陷阱中的III-氮化物激子-极化激元将用于具有高相干度的实用激子-极化激元激光器和具有多组分冷凝物的高重复频率约瑟夫森振荡器。
We demonstrate trapped exciton-polariton emission at room temperature from nonpolar GaN/AlGaN cavities sandwiched between air/AlGaN distributed Bragg reflectors. Nanoscale thickness fluctuations characteristic to the nonpolar AlGaN cavity layer create deep potential traps, giving rise to a strong (in-plane) localization of exciton-polaritons. The observed quantized exciton-polariton states exhibit a large quantized energy of up to 6 meV, which benefits from the wide bandgap of III-nitrides. The experimental results are well explained by numerical simulations. III-Nitride exciton-polaritons in such deep traps will be useful for practical exciton-polariton lasers with high degrees of coherence and high-repetition rate Josephson oscillators with multicomponent condensates.