Oligosaccharide/Silicon-Containing Block Copolymers with 5 nm Features for Lithographic Applications
Oligosaccharide/Silicon-Containing Block Copolymers with 5 nm Features for Lithographic Applications
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DOI：
10.1021/nn300459r
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发表时间：
2012-04-01
期刊：
影响因子：
17.1
通讯作者：
Ellison, Christopher J.
中科院分区：
文献类型：
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作者：
Cushen, Julia D.;Otsuka, Issei;Ellison, Christopher J.
嵌段共聚物表现出在下一代光刻中使用的潜力，因为它们能够自组装成3-100 nm长度尺度上的有序周期阵列。嵌段共聚物的成功平版印刷应用依赖于满足三个关键条件：高Flory-Huggins相互作用参数（chi），其使得能够形成
Block copolymers demonstrate potential for use in next-generation lithography due to their ability to self-assemble into well-ordered periodic arrays on the 3-100 nm length scale. The successful lithographic application of block copolymers relies on three critical conditions being met: high Flory-Huggins interaction parameters (chi), which enable formation of