Statistical prediction of temperature effects inside through-silicon vias by means of orthogonal polynomials
Statistical prediction of temperature effects inside through-silicon vias by means of orthogonal polynomials
复制标题
利用正交多项式统计预测硅通孔内的温度效应
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
F. Canavero
中科院分区：
文献类型：
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作者：
P. Manfredi;F. Canavero
提出了一种硅通孔（TSV）的随机SPICE模型。该模型是基于最近的国家的最先进的等效电路模型的TSV，并允许固有地包括物理参数的可能的随机变化。其基本思想是描述的随机电路方程的正交多项式，其未知系数从修改后的系统的确定性解决方案。一个应用实例涉及的TSV在不确定的温度条件下的随机模拟的结论。
This paper presents a stochastic SPICE model for through-silicon vias (TSVs). The model is based on recent state-of-the-art equivalent-circuit models for TSVs and allows to inherently include possible random variations of physical parameters. The underlying idea is the description of the stochastic circuit equations in terms of orthogonal polynomials, whose unknown coefficients are obtained from the deterministic solution of a modified system. An application example involving the stochastic simulation of a TSV in presence of uncertain temperature conditions concludes the paper.