Invited : Performance enhancement technologies in III-V/Ge MOSFETs Ge-based and III-V technologies
Invited : Performance enhancement technologies in III-V/Ge MOSFETs Ge-based and III-V technologies
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邀请：III-V/Ge MOSFET 的性能增强技术 Ge 基和 III-V 技术
DOI：
10.1149/05809.0137ecst
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
and M. Takenaka
中科院分区：
文献类型：
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作者：
S. Takagi;Rui Zhang;S. -H. Kim;M. Yokoyama;and M. Takenaka
利用Si衬底上的高迁移率III-V/Ge沟道的CMOS由于其增强的载流子输运特性而被期望成为未来高性能和低功耗先进LSI的有前途的器件之一。然而，用于满足未来节点MOSFET要求的Ge/III-V n-MOSFET和pMOSFET的器件/工艺/集成技术尚未建立。在本文中，我们解决栅极堆叠和沟道工程，以提高MOSFET的性能，重点是薄EOT和SOI体，这是强制性的，在未来的节点。对于Ge MOSFET，通过等离子体后氧化形成的GeOx/Ge界面被示出为实现薄EOT、低Dit和高迁移率。通过使用这些HfO 2/Al 2 O3/GeOx/Ge栅堆叠，获得了EOT为0. 76 nm的薄膜具有较高的电子迁移率（690 cm 2/Vs）和空穴迁移率（550 cm 2/Vs）。对于III-V MOSFET，具有MOS界面缓冲层的SiO2 InAs沟道被示出为对于3 nm的InAs厚度提供高电子迁移率。利用这种沟道工程，55 nm Lch量子阱沟道InAs-OI n-MOSFET已被证明具有上级短沟道效应免疫力和相当高的导通电流。
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the promising devices for high performance and low power advanced LSIs in the future, because of the enhanced carrier transport properties. However, the device/process/integration technologies of Ge/III-V n-and pMOSFETs for satisfying requirements of future node MOSFETs have not been established yet. In this paper, we address gate stack and channel engineering for enhancing the MOSFET performance with emphasis on thin EOT and ultrathin body, which are mandatory in the future nodes. As for Ge MOSFETs, GeOx/Ge interfaces formed by plasma post oxidation are shown to realize thin EOT, low Dit and high mobility. By using these HfO2/Al2O3/GeOx/Ge gate stacks, Ge n-and p-MOSFETs with EOT of 0. 76 nm have been demonstrated with high electron (690 cm 2/Vs) and hole (550 cm 2/Vs) mobility. As for III-V MOSFETs, ultrathin InAs channels with MOS interface buffer layers are shown to provide high electron mobility for an InAs thickness of 3 nm. By utilizing this channel engineering, 55 nm-Lch quantum well channel InAs-OI n-MOSFETs have been demonstrated with superior short channel effect immunity and fairly high on current.