Sub-10-nm nanolithography with a scanning helium beam
Sub-10-nm nanolithography with a scanning helium beam
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DOI：
10.1116/1.3182742
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发表时间：
2009-07-01
影响因子：
1.4
通讯作者：
Maas, Diederik
中科院分区：
文献类型：
--
作者：
Sidorkin, Vadim;van Veldhoven, Emile;Maas, Diederik
扫描氦离子束光刻是一种很有前途的图案定义技术，密集的亚10纳米结构。在高分辨率、高灵敏度和低邻近效应方面的强大性能在氢倍半硅氧烷抗蚀剂中得到证明。
Scanning helium ion beam lithography is presented as a promising pattern definition technique for dense sub-10-nm structures. The powerful performance in terms of high resolution, high sensitivity, and a low proximity effect is demonstrated in a hydrogen silsesquioxane resist.